t h yristo r -t h yristor modules stt181gkxx b type stt181gk08 b stt181gk12 b stt181gk14 b stt181gk16 b stt181gk18 b v rrm v drm v 800 1200 1400 1600 1800 v rsm v dsm v 900 1300 1500 1700 1900 dimensions in mm (1mm=0.0394") symbol t est conditions maximum ratings unit t vj =t vjm t c =85 o c; 180 o sine 300 181 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 6000 6400 5250 5600 a i tsm , i fsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 180000 170000 137000 128000 a 2 s i 2 dt (di/dt) cr 150 500 a/us (dv/dt) cr t vj =t vjm ; v dr =2/3v drm r gk = ; method 1 (linear voltage rise) 1000 v/us p gm t vj =t vjm t p =30us i t =i t a vm t p =500us 120 60 w p ga v 8 w i trms , i frms i t a vm , i f a vm o c t vj t vjm t stg -40...+125 125 -40...+125 v isol 50/60hz, rms t=1min i isol <1ma t=1s 3000 3600 v~ m d mounting torque (m6) t erminal connection torque (m6) _ 2.25-2.75/20-25 4.5-5.5/40-48 nm/lb.in. w eight g t vj =t vjm repetitive, i t =500a f=50hz, t p =200us v d =2/3v drm i g =0.5a non repetitive, i t =500a di g /dt=0.5a/us v rgm 10 v t ypical 173 p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
t h yristo r -t h yristor modules stt181gkxx b symbol t est conditions characteristic v alues unit v v t , v f i t , i f =300a ; t vj =25 o c 1.25 v t o f or p o w er-loss calculations only (t vj =125 o c) 0.88 v r t 1.15 m v d =6 v ; t vj =25 o c t vj =-40 o c v gt 2.5 2.6 v v d =6 v ; t vj =25 o c t vj =-40 o c i gt 150 200 ma v gd t vj =t vjm ; v d =2/3v drm 0.2 v i gd 10 ma i h t vj =25 o c ; v d =6 v ; r gk = 200 ma t vj =25 o c ; t p =30us ; v d =6v i g =0.5a ; di g /dt=0.5a/us 300 ma i l per t h y r istor/diode ; dc current per module r thjc 0.155 0.0775 k/w per t h y r istor/diode ; dc current per module r thjk 0.225 0.1125 k/w d s creeping distance on sur f ace 12.7 mm d a st r i k e distance through air 9.6 mm a maxi m um all o w a b le accele r ation 50 m/s 2 i rrm , i drm t vj =t vjm ; v r =v rrm ; v d =v drm 10 ma t vj =25 o c ; v d =1/2v drm i g =0.5a ; di g /dt=0.5a/us t gd 2 us t vj =t vjm ; i t =300a ; t p =200us ; -di/dt=10a/us ty p . v r =100 v ; dv/dt=20v/us ; v d =2/3v drm t q 150 us uc q s t vj =t vjm ; i t , i f =300a ; -di/dt=50a/us 550 i rm 235 a a d v an t a ges * space and w eight s a vings * simple mounting * impr o v ed tempe r ature and p o w er cycling * reduced protection circuits applic a tions * motor control * p o w er co n v e r ter * heat and tempe r ature control f or indust r ial fu r naces and chemical processes * lighting contro l * contactless s witches fe a tures * inte r national standard pa c kage * glass passi v ated chips * isolation v oltage 3600 v~ * ul file no.e310749 * rohs compliant * copper base plate p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
t h yristo r -t h yristor modules stt181gkxx b fig. 2a maximum forward current at case temperature fig. 3 power dissipation versus on- state current and ambient temperature (per thyristor or diode) fig. 5 three phase rectifier bridge: power dissipation versus direct output current and ambient temperature fig. 1 surge overload current i tsm , i fsm : crest value, t: duration fig. 4 gate trigger characteristics fig. 6 gate trigger delay time fig. 2 i 2 t versus time (1-10 ms) 3 x stt181b p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
t h yristo r -t h yristor modules stt181gkxx b fig. 7 three phase ac-controller: power dissipation versus rms output current and ambient temperature fig. 8 transient thermal impedance junction to case (per thyristor or diode) fig. 9 transient thermal impedance junction to heatsink (per thyristor or diode) r thjc for various conduction angles d: d r thjc (k/w) dc 0.155 180 o c 0.167 120 o c 0.176 60 o c 0.197 30 o c 0.227 constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.0072 0.001 2 0.0188 0.08 3 0.129 0.2 r thjk for various conduction angles d: d r thjk (k/w) dc 0.225 180 o c 0.237 120 o c 0.246 60 o c 0.267 30 o c 0.297 constants for z thjk calculation: ir thi (k/w) t i (s) 1 0.0072 0.001 2 0.0188 0.08 3 0.129 0.2 4 0.07 1.0 3 x stt181b p4 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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